Strain improves performance of atomically thin semiconductor material

6 years ago
Anonymous $CLwNLde341

https://www.sciencedaily.com/releases/2018/05/180510115045.htm

In a study appearing in the research journal Nano Letters, University of Connecticut Assistant Professor of Mechanical Engineering Michael Pettes reports that a six-atom thick bilayer of tungsten diselenide exhibited a 100-fold increase in photoluminescence when it was subjected to strain. The material had never exhibited such photoluminescence before.

The findings mark the first time scientists have been able to conclusively show that the properties of atomically thin materials can be mechanically manipulated to enhance their performance, Pettes says. Such capabilities could lead to faster computer processors and more efficient sensors.