Nanowires under tension create the basis for ultrafast transistors

Nanowires under tension create the basis for ultrafast transistors

2 years ago
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https://www.sciencedaily.com/releases/2022/02/220207112656.htm

Nanowires have a unique property: These ultra-thin wires can sustain very high elastic strains without damaging the crystal structure of the material. And yet the materials themselves are not unusual. Gallium arsenide, for example, is widely used in industrial manufacturing, and is known to have a high intrinsic electron mobility.

To further enhance this mobility, the Dresden researchers produced nanowires consisting of a gallium arsenide core and an indium aluminum arsenide shell. The different chemical ingredients result in the crystal structures in the shell and the core having slightly different lattice spacings. This causes the shell to exert a high mechanical strain on the much thinner core. The gallium arsenide in the core changes its electronic properties. "We influence the effective mass of electrons in the core. The electrons become lighter, so to speak, which makes them more mobile," explained Dr. Emmanouil Dimakis, scientist at the HZDR's Institute of Ion Beam Physics and Materials Research and initiator of the recently published study.