https://www.sciencedaily.com/releases/2022/09/220922103205.htm

A research team led by Professor Junwoo Son and Dr. Minguk Cho (Department of Materials Science and Engineering) at POSTECH has succeeded in maximizing the switching efficiency of oxide semiconductor devices by inserting platinum nanoparticles. The findings from the study were recently published in the international journal Nature Communications.

The oxide material with the metal-insulator phase transition, in which the phase of a material rapidly changes from an insulator to a metal when the threshold voltage is reached, is spotlighted as a key material for fabricating low-power semiconductor devices.