Samsung Develops DDR5 Memory Modules With 512 GB Capacity – Based on High-K Metal Gate Process & Up To 7200 Mb/s
https://wccftech.com/samsung-develops-ddr5-memory-modules-512-gb-capacity/
Samsung has announced the development of the industry's first DDR5 memory module packing an insane 512 GB of capacity. The memory modules are targeted at AI/ML, exascale hyper-computing, analytics, networking, and other data-intensive workloads.
Samsung states that the 512 GB DDR5 memory modules will expand its existing portfolio to offer the densest capacity ever produced. The memory modules will be featuring the HKMG or High-K Metal Gate process node which was also used by Samsung for the production of its GDDR6 VRAM modules. The process node allows the memory modules to use 13% lower power & also reduces power leakages.
Samsung Develops DDR5 Memory Modules With 512 GB Capacity – Based on High-K Metal Gate Process & Up To 7200 Mb/s
Mar 25, 2021, 4:21am UTC
https://wccftech.com/samsung-develops-ddr5-memory-modules-512-gb-capacity/
> Samsung has announced the development of the industry's first DDR5 memory module packing an insane 512 GB of capacity. The memory modules are targeted at AI/ML, exascale hyper-computing, analytics, networking, and other data-intensive workloads.
> Samsung states that the 512 GB DDR5 memory modules will expand its existing portfolio to offer the densest capacity ever produced. The memory modules will be featuring the HKMG or High-K Metal Gate process node which was also used by Samsung for the production of its GDDR6 VRAM modules. The process node allows the memory modules to use 13% lower power & also reduces power leakages.