https://wccftech.com/kioxia-shows-off-a-potential-successor-to-nand-flash/

Kioxia, which was formally known as Toshiba Memory, has hopefully created a successor to 3D NAND Flash, which offers increased storage density compared to QLC NAND flash. This new technology, which was announced Thursday, allows memory chips to have smaller cells and more storage per cell, which can significantly increase the memory density per cell.

Last Thursday, Kioxia announced the world's first "three-dimensional semicircular split-gate flash memory cell structure," which is named the Twin BiCS Flash. This is different from Kioxia's other product BiCS5 Flash. BiCS5 flash uses circular charge trap cells, while the Twin BiCS Flash uses semi-circular floating gate cells. The new structure enlarges the window for programming the cell, even though the cells are physically smaller when compared to the CT technology.