https://wccftech.com/samsung-develops-5nm-euv-node/

After it was reported that TSMC will most likely start mass production of its 7nm EUV nodes during the second quarter of this year, it didn’t take long for Samsung to come with full force with a major announcement concerning its 5nm EUV process. The Korean semiconductor behemoth states that its 5nm EUV technology is complete and is now ready for customers’ samples. The latest manufacturing node provides a slew of benefits over the 7nm process, which we’ll discuss in additional detail below.

Samsung states that when compared to 7nm, Samsung’s 5nm FinFET EUV provides up to a 25 percent increase in logic area efficiency, coupled with 10 percent higher performance. It is interesting to note that Samsung did not specify if it was comparing its 5nm EUV process to the 7nm FinFET one, or 7nm FinFET EUV which TSMC will ramp up later this year for several clients, including Huawei for its Kirin 985. We’ll also have to see how big of a performance gain Samsung’s 5nm EUV process has over TSMC’s 7nm N7 Pro architecture, which is reportedly being made specifically for Apple and its A13 silicon for the upcoming iPhone range.