Memory in a metal, enabled by quantum geometry
https://www.sciencedaily.com/releases/2020/09/200901093406.htm
Berkeley researchers led by HKU President Professor Xiang Zhang when he was in Berkeley, in collaboration with Professor Aaron Lindenberg's team at Stanford University, invented a new data storage method: They make odd numbered layers slide relative to even-number layers in tungsten ditelluride, which is only 3nm thick. The arrangement of these atomic layers represents 0 and 1 for data storage. These researchers creatively make use of quantum geometry: Berry curvature, to read information out. Therefore, this material platform works ideally for memory, with independent 'write' and 'read' operation. The energy consumption using this novel data storage method can be over 100 times less than the traditional method.
This work is a conceptual innovation for non-volatile storage types and can potentially bring technological revolution. For the first time, the researchers prove that two-dimensional semi-metals, going beyond traditional silicon material, can be used for information storage and reading. This work was published in the latest issue of the journal Nature Physics [ref 1]. Compared with the existing non-volatile (NVW) memory, this new material platform is expected to increase storage speed by two orders and decrease energy cost by three orders, and it can greatly facilitate the realization of emerging in-memory computing and neural network computing.