https://wccftech.com/samsung-commences-ddr5-memory-mass-production-on-advanced-14nm-euv-node-up-to-768-gb-capacity-7200-mbps-speeds-achieved/

Samsung has officially begun mass production of its next-generation DDR5 memory which will be made on the company's 14nm EUV process node. The memory will be aimed at HPC & AI servers, offering over twice the performance of DDR4 memory.

According to Samsung, the new process node will help Samsung's 14nm DDR5 memory to achieve an unprecedented increase in overall speeds. Currently, the 14nm EUV process will push speeds to 7.2 Gbps which is more than twice the speed offered by DDR4 (3.2 Gbps). The company has told us that it will be expanding its 14nm DDR5 memory portfolio to data centers, supercomputers, and enterprise server applications with even denser options based on 24Gb DRAM ICs. This would allow the company to scale their DDR5 memory from 512 GB - 1 TB capacities to 768 GB and 1.5 TB Dram capacities.