https://www.businesswire.com/news/home/20180719005984/en/

SAN JOSE, Calif.--(BUSINESS WIRE)--Jul 19, 2018--Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced the development of a prototype sample of 96-layer BiCS FLASH TM, its proprietary three-dimensional (3D) flash memory, with 4-bit-per-cell (quad level cell, QLC) technology. With this milestone achievement, Toshiba demonstrates its technology leadership in the storage market by delivering technology that boosts single-chip memory capacity to the highest level yet achieved 1.

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